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| UNISONIC TECHNOLOGIES CO., LTD 2SB857 SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. PNP SILICON TRANSISTOR Lead-free: 2SB857L Halogen-free:2SB857G ORDERING INFORMATION Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number Lead Free 2SB857L-x-T6C-K 2SB857L-X-TA3-T 2SB857L-x-TN3-R Halogen Free 2SB857G-x-T6C-K 2SB857G-x-TA3-T 2SB857G-x-TN3-R Package TO-126C TO-220 TO-252 Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tube Tape Reel www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R217-006.E 2SB857 ABSOLUTE MAXIMUM RATING (Ta=25C) PARAMETER Collector-Base Voltages Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (IC Peak) SYMBOL VCBO VCEO VEBO IC IC(PEAK) PNP SILICON TRANSISTOR RATINGS UNIT -130 V -100 V -5 V -4 A -8 A TO-126C 10 W Total Power Dissipation (TC=25C) PD TO-220 40 W TO-252 20 W Junction Temperature TJ +150 C Storage Temperature TSTG -50~+150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-10A, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=-50mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-10A, IC=0 Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A (Note) Base-Emitter Saturation Voltage VBE(ON) VCE=-4V, IC=-1A (Note) Collector Cut-off Current ICBO VCB=-130V, IC=0 hFE1 VCE=-4V, IC=-0.1A (Note) DC Current Gain VCE=-4V, IC=-1A (Note) hFE2 Transition Frequency fT VCE=-4V, IC=-500mA, f=100MHz Note: Pulse Test: Pulse Width380S, Duty Cycle2%. MIN -130 -100 -5 TYP MAX UNIT V V V V V A -1 -1 -1 35 60 15 320 MHz CLASSIFICATION OF hFE2 CLASSIFICATION RANGE B 60 ~ 120 C 100 ~ 200 D 160 ~ 320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R217-006.E 2SB857 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R217-006.E 2SB857 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R217-006.E |
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